Imprint apparatus, imprint method, and manufacturing method of semiconductor device

ABSTRACT

According to one embodiment, an imprint apparatus that presses a fine pattern of an original plate against a photo-curable resin dropped onto a substrate, and transfers the fine pattern to the photo-curable resin by applying light, includes a dropping unit that drops the photo-curable resin onto a shot region obtained by dividing the substrate into a plurality of sections, an original plate supporting unit that stamps the original plate on the photo-curable resin on the substrate, the original plate being supported the fine pattern towards the substrate side, and a substrate supporting unit that supports the substrate and moves the substrate such that a position of a predetermined shot region of the substrate is a dropping position of the dropping unit or a stamping position of the original plate, in which the dropping unit is controlled such that the photo-curable resin is sequentially dropped onto the plurality of shot regions of the substrate, and the original plate supporting unit is controlled such that the fine pattern is transferred by sequentially stamping the original plate on the photo-curable resin dropped onto the plurality of shot regions, while operating the substrate supporting unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2018-159345, filed on Aug. 28, 2018; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to an imprint apparatus,an imprint method, and a manufacturing method of a semiconductor device.

BACKGROUND

An imprint method has been proposed as a method of forming a finepattern in a manufacturing process of a semiconductor device. In theimprint method, a resist is dropped onto a film to be processed, that isformed on a substrate, a template on which a fine pattern is formed, ispressed against the resist, and a concave portion of the template isfilled with the resist, and then, the resist is cured by beingirradiated with an ultraviolet ray.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a configuration example of an imprintapparatus according to a first embodiment;

FIG. 2 is a schematic view of a wafer that is a processing target of theimprint apparatus according to the first embodiment;

FIG. 3A and FIG. 3B are flow diagrams illustrating an example of aprocedure of resist dropping processing of the imprint apparatusaccording to the first embodiment;

FIG. 4A to FIG. 4C are flow diagrams illustrating an example of aprocedure of stamping processing of a template of the imprint apparatusaccording to the first embodiment;

FIG. 5 is a flow diagram illustrating an example of the procedure of thestamping processing of the template of the imprint apparatus accordingto the first embodiment;

FIG. 6A is a schematic view illustrating an operation of a wafer stagein the imprint apparatus according to the first embodiment;

FIG. 6B is a schematic view illustrating an operation of a wafer stagein an imprint apparatus according to a comparative example;

FIG. 7 is a diagram illustrating a configuration example of an imprintapparatus according to a modification example of the first embodiment;

FIG. 8A is a dropping recipe table retained by the imprint apparatusaccording to the modification example of the first embodiment;

FIG. 8B is an imprint recipe table retained by the imprint apparatusaccording to the modification example of the first embodiment;

FIG. 9 is a flow diagram illustrating an example of a procedure ofimprint processing in the imprint apparatus according to themodification example of the first embodiment;

FIG. 10 is a schematic view illustrating some finishing properties of aresist pattern;

FIG. 11 is a diagram illustrating an example of a relationship between aprocessing parameter and finishing properties;

FIG. 12 is a diagram illustrating a configuration example of an imprintapparatus according to a second embodiment;

FIG. 13 is an irradiation condition table retained by the imprintapparatus according to the second embodiment;

FIG. 14A and FIG. 14B are flow diagrams illustrating an example of aprocedure of resist dropping processing of the imprint apparatusaccording to the second embodiment;

FIG. 15 is a flow diagram illustrating an example of a procedure ofimprint processing in the imprint apparatus according to the secondembodiment;

FIG. 16 is a diagram illustrating an example of a relationship between aprocessing parameter and finishing properties; and

FIG. 17 is a diagram illustrating a configuration example of an imprintapparatus according to a first modification example of the secondembodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, an imprint apparatus thatpresses a fine pattern of an original plate against a photo-curableresin dropped onto a substrate, and transfers the fine pattern to thephoto-curable resin by applying light, includes a dropping unit thatdrops the photo-curable resin onto a shot region obtained by dividingthe substrate into a plurality of sections, an original plate supportingunit that stamps the original plate on the photo-curable resin on thesubstrate, the original plate being supported the fine pattern towardsthe substrate side, and a substrate supporting unit that supports thesubstrate and moves the substrate such that a position of apredetermined shot region of the substrate is a dropping position of thedropping unit or a stamping position of the original plate, in which thedropping unit is controlled such that the photo-curable resin issequentially dropped onto the plurality of shot regions of thesubstrate, and the original plate supporting unit is controlled suchthat the fine pattern is transferred by sequentially stamping theoriginal plate on the photo-curable resin dropped onto the plurality ofshot regions, while operating the substrate supporting unit.

Hereinafter, the present invention will be described in detail withreference to the drawings. Furthermore, the present invention is notlimited to the following embodiments. In addition, constituents in thefollowing embodiments include constituents that can be easily conceivedby a person skilled in the art or constituents that are substantiallythe same.

First Embodiment

A first embodiment will be described by using FIG. 1 to FIG. 11.

Configuration Example of Imprint Apparatus

FIG. 1 is a diagram illustrating a configuration example of an imprintapparatus 1 according to a first embodiment. As illustrated in FIG. 1,the imprint apparatus 1 includes a wafer stage 10, a template stage 21,a template chuck 22, a pressurizing unit 23, a hoisting unit 24, analignment unit 30, a light source 41, an aperture 42, a dropping unit50, and a control unit 60.

The wafer stage 10 places the wafer 100 thereon, and is moved in theplane parallel to the placed wafer 100 (in the horizontal plane). Thewafer stage 10 moves the wafer 100 to the lower side of the droppingunit 50 at the time of dropping the resist onto the wafer 100, and movesthe wafer 100 to the lower side of the template 200 at the time ofperforming transfer processing with respect to the wafer 100. Here, amovement direction of the wafer stage 10 between the dropping unit 50and the template 200, is an X direction.

The wafer 100, for example, is a semiconductor substrate such as asilicon substrate. Alternatively, the wafer 100 may be a glasssubstrate, a metal substrate, or the like. A film to be processed (notillustrated) is formed on the wafer 100.

The template 200, for example, is an original plate that is used in ananoimprint lithography or the like. A fine pattern isthree-dimensionally formed on a lower surface side of the template 200.The template 200 is configured of a transparent member such as glass orsynthetic quartz.

The template stage 21 performs vacuum suction with the template chuck22, and thus, retains the template 200 to the upper side of the wafer100 such that the fine pattern is directed towards the lower side. Thetemplate stage 21 rises and falls by the hoisting unit 24 at apredetermined speed. In addition, the pressurizing unit 23 presses thetemplate 200 against the resist (not illustrated) on the wafer 100 whilepressurizing the rear surface of the template 200 with air pressure orthe like.

The alignment unit 30 is disposed on the template stage 21. Thealignment unit 30, for example, includes a microscope, an imagingdevice, and the like, which are not illustrated, and performs positiondetection of the wafer 100 or position detection of the template 200.

The light source 41, for example, is a device applying an ultravioletray, and is disposed on the upper side of the template stage 21. Theultraviolet ray passing through the aperture 42 from the light source41, is applied from the upper side of the template 200 in a state wherethe template 200 is pressed against the resist.

The dropping unit 50 is a device dropping the resist onto the wafer 100according to an ink jet method. An ink jet head of the dropping unit 50,includes a plurality of fine holes ejecting a liquid droplet of theresist, and drops a dot-like resist onto the wafer 100. For example, aphoto-curable resin is used as the resist. In addition, hereinafter, theliquid droplet of the resist dropped into the shape of a dot, will bealso referred to as a droplet.

The control unit 60, for example, is configured as a computer includinga hardware processor such as a central processing unit (CPU), a memory,a hard disk drive (HDD), and the like. The control unit 60 controls eachunit of the wafer stage 10, the template stage 21, the template chuck22, the pressurizing unit 23, the hoisting unit 24, the alignment unit30, the light source 41, the aperture 42, and the dropping unit 50.

Processing Example of Imprint Apparatus

Next, a processing example of the imprint apparatus 1 will be describedby using FIG. 2 to FIG. 5.

FIG. 2 is a schematic view of the wafer 100 that is a processing targetof the imprint apparatus 1 according to the first embodiment. Asillustrated in FIG. 2, in imprint processing, the wafer 100 ispartitioned into a plurality of shot regions X. Then, the dropping unit50 drops the resist onto a predetermined number of shot regions X. Next,the template 200 is stamped on the shot region X onto which the resistis dropped. That is, the template 200 is contacted on the shot region X.In the stamping of the template 200, the template 200 is pressed againstthe resist on the wafer 100, and the fine pattern of the template 200 istransferred to the resist.

In FIG. 2, in shot regions X of one row, arranged in the X directionthat is the movement direction of the wafer stage 10 between thedropping unit 50 and the template 200, shot regions A to F arecollectively processed every other shot region. At this time, first, theresist is dropped onto the shot regions A, B, C, D, E, and F, in thisorder. Next, the template 200 is stamped on the shot regions F, E, D, C,B, and A, in this order. Such a state is illustrated in FIG. 3A and FIG.3B to FIG. 5.

FIG. 3A and FIG. 3B are flow diagrams illustrating an example of aprocedure of resist dropping processing of the imprint apparatus 1according to the first embodiment. As illustrated in FIG. 3A and FIG.3B, a film L to be processed is formed on the wafer 100. The wafer stage10 of the imprint apparatus 1, moves the shot regions A, B, C, D, E, andF, in this order, to a resist dropping position of the dropping unit 50.The dropping unit 50 sequentially drops the droplet of the resist ontoeach of the shot regions A to F.

FIG. 3A illustrates a state in which the dropping of a droplet Ra withrespect to the shot region A and the dropping of a droplet Rb withrespect to the shot region B are ended, and the dropping of the resistwith respect to the shot region C is performed. The dropping of theresist with respect to the shot region C is ended, and then, the waferstage 10 is moved in an XF direction parallel to the X direction, andthe shot region D of the wafer 100 is moved to the resist droppingposition.

FIG. 3B illustrates a state in which the dropping of the resist withrespect to the final shot region F to be collectively processed, isperformed. The dropping of the resist with respect to the shot region Fis ended, and then, the wafer stage 10 is further moved in the XFdirection, and the shot region F is moved to a stamping position of thetemplate 200.

FIG. 4A to FIG. 4C and FIG. 5 are flow diagrams illustrating an exampleof a procedure of stamping processing of the template 200 of the imprintapparatus 1 according to the first embodiment. FIG. 4A to FIG. 4Cillustrate a state in which the formation of a resist pattern RPf in theshot region F is ended, and the template 200 is stamped on a droplet Rein the shot region E.

As illustrated in FIG. 4A, in a case where the resist pattern RPf isformed in the shot region F, the wafer stage 10 is moved in an XBdirection, and the shot region E is moved to the stamping position ofthe template 200. The alignment unit 30 detects the position of thewafer 100 and the template 200, and adjusts the position of the wafer100 and the position of the template 200.

As illustrated in FIG. 4B, the hoisting unit 24 moves the template stage21 to the lower side at a predetermined speed, and brings the template200 into contact with the droplet Re on the wafer 100. The pressurizingunit 23 pressurizes the template stage 21 to the lower side.Accordingly, the template 200 is pressed against the droplet Re on thewafer 100. However, the template 200 has a slight distance from thewafer 100 such that the template 200 is not in contact with the wafer100. In a case where such a state is retained for a predetermined time,a concave portion of the fine pattern of the template 200 is filled withthe droplet Re.

In a state where the template 200 is pressed against the droplet Re, theultraviolet ray passing through the aperture 42 from the light source41, is applied to the droplet Re on the wafer 100 by being transmittedthrough a through hole (not illustrated) of the template stage 21, andthe template 200. Accordingly, the droplet Re is cured. At this time,the shot regions X are collectively processed every other shot region,and thus, it is possible to prevent the resist in the shot region Xadjacent to the droplet Re of a curing target, from being cured due tothe influence of the irradiation.

As illustrated in FIG. 4C, the hoisting unit 24 moves the template stage21 to the upper side at a predetermined speed, and releases the template200 from a resist pattern RPe on the wafer 100. The resist pattern RPeis obtained by curing the fine pattern that is transferred to thedroplet Re. A slight resist residual film due to a gap between thetemplate 200 and the wafer 100, exists in each pattern of the resistpattern RPe.

As described above, in a case where the resist pattern RPe is formed inthe shot region E, the wafer stage 10 is moved in the XB direction, andthe shot region D is moved to the stamping position of the template 200.Thus, the template 200 is sequentially stamped on the shot regions F, E,D . . . .

FIG. 5 illustrates a state in which the stamping of the template 200with respect to the final shot region A to be collectively processed, isperformed. As described above, the shot regions A to F are collectivelyprocessed. The imprint apparatus 1 performs the processing describedabove with respect to all of the shot regions on the wafer 100.

After that, the film L to be processed, formed on the wafer 100, isprocessed by using a resist pattern on which the fine pattern of thetemplate 200 is stamped, as a mask. Thus, the formation of the film tobe processed, the formation of the resist pattern, and the process ofthe film to be processed are repeated several times, and thus, asemiconductor device is manufactured.

Comparative Example

Next, the operation of the imprint apparatus 1 will be described whilebeing compared to a comparative example, by using FIG. 6A and FIG. 6B.FIG. 6A is a schematic view illustrating the operation of the waferstage 10 in the imprint apparatus 1 according to the first embodiment,and FIG. 6B is a schematic view illustrating an operation of a waferstage in an imprint apparatus according to the comparative example.

As illustrated in FIG. 6B, in the imprint apparatus of the comparativeexample, the dropping of the resist and the stamping of the template areperformed with respect to each shot region. Therefore, first, a shotregion A′ is moved to a resist dropping position of a dropping unit 50′,and the resist is dropped. Next, the wafer stage is moved in an XF′direction, the shot region A′ is moved to a stamping position of thetemplate 200′, and a template 200′ is stamped. Next, the wafer stage ismoved to an XB′ direction, a shot region B′ is moved to the resistdropping position of the dropping unit 50′, and the resist is dropped.Next, the wafer stage is moved in the XF′ direction, the shot region B′is moved to the stamping position of the template 200′, and the template200′ is stamped. Thus, in a method where the dropping of the resist andthe stamping of the template 200′ are performed with respect to each ofthe shot regions, it is inefficient since the wafer stage reciprocatesbetween the resist dropping position of the dropping unit 50′ and thestamping position of the template 200′, several times.

As illustrated in FIG. 6A, in the imprint apparatus 1 of the firstembodiment, the resist is dropped onto a predetermined number of shotregions X, and then, the template 200 is stamped on the shot regions X.Therefore, first, the shot region A is moved to the resist droppingposition of the dropping unit 50, and the droplet Ra is dropped. Next,the wafer stage 10 is moved in the XF direction, the shot region B ismoved to the resist dropping position of the dropping unit 50, and thedroplet Rb is dropped. Next, the wafer stage 10 is further moved in theXF direction, the shot region C is moved to the resist dropping positionof the dropping unit 50, and a droplet Rc is dropped. Such a process isrepeated up to the shot region F, the shot region F is moved to thestamping position of the template 200, and the template 200 is stamped.Next, the wafer stage 10 is moved in the XB direction, the shot region Eis moved to the stamping position of the template 200, and the template200 is stamped.

Thus, in the imprint apparatus 1 of the first embodiment, the movementdirection of the wafer stage 10 is the XF direction without beingchanged, while the droplets Ra to Rf are dropped onto the shot regions Ato F. In addition, the movement direction of the wafer stage 10 is theXB direction without being changed, while the template 200 is stamped onthe shot regions F to A. That is, in the imprint apparatus 1 of thefirst embodiment, there is not waste in the operation of the wafer stage10, and movement distance is short, compared to the comparative example.Accordingly, it is possible to efficiently perform the imprintprocessing in a shorter time.

Furthermore, in the first embodiment described above, in the example ofFIG. 2, the dropping of the resist is performed in the order of the shotregions A, B, C, D, E, and F, and the stamping of the template 200 isperformed in the order of the shot regions F, E, D, C, B, and A, but theorder is not limited thereto. The dropping of the resist may beperformed in the order of the shot regions A, B, C, D, E, and F, and forexample, the stamping of the template 200 may be performed in the orderof the shot regions A, B, C, D, E, and F. Alternatively, the processingof the shot regions A to F may be performed in other orders.

In addition, in the first embodiment described above, as illustrated inFIG. 3A and FIG. 3B to FIG. 5, an example in which six shot regions A toF are collectively processed, has been described, but it is not limitedthereto. The number of shot regions X to be collectively processed maybe greater than or equal to 2.

In addition, in the first embodiment described above, as illustrated inFIG. 3A and FIG. 3B to FIG. 5, an example in which the shot regions A toF of one row, arranged in the X direction that is the movement directionof the wafer stage 10 between the dropping unit 50 and the template 200,are collectively processed, has been described, but it is not limitedthereto. The shot regions X of a plurality of rows, arranged in the Xdirection, may be collectively processed.

Thus, each of the shot regions X can be suitably processed in variousorders and combinations, such that the wafer stage 10 is efficientlymoved, on the premise that two or more shot regions X are collectivelyprocessed.

Modification Example

Next, an imprint apparatus of a modification example of the firstembodiment, will be described by using FIG. 7 to FIG. 11. The imprintapparatus of the modification example of the first embodiment, isdifferent from the first embodiment described above, in that aprocessing parameter is suitably changed in the shot regions to becollectively processed.

As with the first embodiment described above, for example, a case wherethe dropping of the resist is performed in the order of the shot regionsA, B, C, D, E, and F, and the stamping of the template is performed inthe order of the shot regions F, E, D, C, B, and A, will be considered.

In this case, a time from when the resist is dropped to when thetemplate is stamped (hereinafter, also referred to as an “elapsed time”)is different between the shot region A and the shot region F. That is,the elapsed time is long in the shot region A, and the elapsed time isshort in the shot region F. The resist is dropped, and then, the dropletof the resist wet-spreads on the wafer under its own weight. For thisreason, in the shot region A where the elapsed time is long, thespreading of the droplet is larger than that in the shot region F.

Therefore, in the imprint apparatus of the modification example of thefirst embodiment, the processing parameter in each of the shot regionsis changed according to a spreading condition of the droplet, that is,the elapsed time.

FIG. 7 is a diagram illustrating a configuration example of an imprintapparatus 1 a according to the modification example of the firstembodiment. In the imprint apparatus 1 a, a configuration of a controlunit 60 a controlling each unit, is different from that of the firstembodiment. The same reference numerals as the reference numerals of theimprint apparatus 1 of the first embodiment, will be applied to otherconfigurations, and the description thereof will be omitted.

As illustrated in FIG. 7, the control unit 60 a includes a counting unit61 a, a recipe selection unit 62 a, and a storage unit 63 a. Thecounting unit 61 a, the recipe selection unit 62 a, and the storage unit63 a may be realized by allowing the CPU to execute a program, or may berealized by a dedicated hardware circuit. In addition, the storage unit63 a may be realized by an HDD or the like.

The counting unit 61 a counts the order of dropping the resist onto theshot regions to be collectively processed. That is, according to theexample described above, the counting unit 61 a counts the order foreach of the shot regions, such that the first dropping of the resist isperformed with respect to the shot region A, and the third dropping ofthe resist is performed with respect to the shot region C. From theorder of dropping the resist, it is possible to grasp the elapsed timeof each of the shot regions.

The recipe selection unit 62 a selects recipes having a plurality ofdifferent processing parameters, according to the order of dropping theresist, that is, the elapsed time. Examples of the processing parameterinclude a gap between the template 200 and the wafer 100, a pressingforce, a pressing speed, a releasing speed, a resist dropping amount,and the like.

The gap between the template 200 and the wafer 100, is a gap between thetemplate 200 and the wafer 100 at the time of pressing the template 200against the wafer 100, and can be changed by adjusting a falling amountof the template stage 21 with the hoisting unit 24. In addition, atleast any one of the template stage 21 and the wafer stage 10 isinclined, and thus, the gap with respect to the template 200 in theplane of the wafer 100, can be changed. The pressing force can bechanged by adjusting a pressurizing force with respect to the templatestage 21 with the pressurizing unit 23. The pressing speed and thereleasing speed can be changed by adjusting a rising and falling speedof the template stage 21 with the hoisting unit 24. The resist droppingamount can be changed by adjusting a dropping amount of the resist withthe dropping unit 50.

The storage unit 63 a stores a recipe table including a plurality ofrecipes with different processing parameters. In FIG. 8A and FIG. 8B, anexample of the recipe table is illustrated.

FIG. 8A is a dropping recipe table retained by the imprint apparatus 1 aaccording to the modification example of the first embodiment, and FIG.8B is an imprint recipe table retained by the imprint apparatus 1 aaccording to the modification example of the first embodiment. In aplurality of processing parameters, the resist dropping amount follows adropping recipe, and the gap between the template 200 and the wafer 100,the pressing force, the pressing speed, and the releasing speed followan imprint recipe.

In FIG. 8A and FIG. 8B, an upward arrow indicates “large”, “high”,“great”, and the like, and a downward arrow indicates “small”, “low”,“less”, and the like. For example, the resist dropping amount is less inthe shot region where the elapsed time is short, and is great in theshot region where the elapsed time is long. In addition, for example,the gap between the template 200 and the wafer 100, is large in the shotregion where the elapsed time is short, and is small in the shot regionwhere the elapsed time is long. In addition, for example, the pressingspeed is low in the shot region where the elapsed time is short, and ishigh in the shot region where the elapsed time is long. However, suchsetting of the processing parameter is merely an example, and can besuitably changed. In addition, the processing parameter that can beincorporated in the recipe, is not limited to the example of FIG. 8A andFIG. 8B.

Next, a processing example of the imprint apparatus 1 a will bedescribed by using FIG. 9.

FIG. 9 is a flow diagram illustrating an example of a procedure ofimprint processing in the imprint apparatus 1 a according to themodification example of the first embodiment. As illustrated in FIG. 9,the control unit 60 a moves the wafer stage 10, and drops the resistonto the plurality of shot regions with the dropping unit 50 (StepS101). At this time, the counting unit 61 a counts the order of droppingthe resist with respect to each of the shot regions. The recipeselection unit 62 a selects the dropping recipe different with respectto each of the shot regions, according to the order of dropping theresist. The dropping unit 50 changes the dropping amount of the resistwith respect to each of the shot regions, according to the selecteddropping recipe.

The control unit 60 a moves a predetermined shot region in the shotregions onto which the resist is dropped, to the lower side of thetemplate 200, and executes alignment (Step S102). The recipe selectionunit 62 a selects the imprint recipe suitable for the shot region,according to the order of dropping the resist (Step S103).

The hoisting unit 24 allows the template stage 21 to fall (Step S104).At this time, the hoisting unit 24 adjusts a falling speed of thetemplate stage 21, that is, a pressing speed of the template 200,according to the selected imprint recipe.

The pressurizing unit 23 presses the resist on the wafer 100 whilepressurizing the rear surface of the template 200. At this time, apressing force of the template 200 with respect to the wafer 100 isadjusted according to the selected imprint recipe.

The hoisting unit 24 allows the template stage 21 to rise (Step S106).At this time, the hoisting unit 24 adjusts a rising speed of thetemplate stage 21, that is, a releasing speed of the template 200 fromthe resist pattern, according to the selected imprint recipe.

The control unit 60 a determines whether or not the template 200 hasbeen stamped on all of the shot regions onto which the resist is dropped(Step S107). When the stamping with respect to all of the shot regionsis not ended (Step S107: No), the control unit 60 a selects the nextshot region (Step S108). Then, the control unit 60 a repeats theprocessings from Step S102 to Step S106.

When the stamping with respect to all of the shot regions onto which theresist is dropped, is ended (Step S107: Yes), the control unit 60 adetermines whether or not the imprint processing with respect to all ofthe shot regions on the wafer 100 is ended (Step S109). When the imprintprocessing with respect to all of the shot regions is not ended (StepS109: No), the processings from Step S101 to Step S108 are repeated.When the imprint processing with respect to all of the shot regions isended (Step S109: Yes), the control unit 60 a ends the imprintprocessing.

As described above, the imprint processing in the imprint apparatus 1 ais ended.

However, in order to set the recipe as illustrated in FIG. 8A and FIG.8B described above, it is necessary to condition the processingparameter for each of the shot regions, according to the order ofdropping the resist, that is, the length of the elapsed time from whenthe resist is dropped to when the template 200 is stamped. Such aconditioning procedure will be described by using FIG. 10 and FIG. 11.

FIG. 10 is a schematic view illustrating some finishing properties of aresist pattern RP. As illustrated in FIG. 10, in the imprint processing,examples of the finishing properties of the resist pattern RP to benoted, include a protrusion defect EXT, a pattern defect DEF, a residuallayer thickness RLT, and the like.

When the template 200 is pressed against the resist on the wafer 100,the resist bleeding from an end portion of the template 200, creeps upthe edge of the template 200, and is photo-cured as it is, and thus, theprotrusion defect EXT occurs.

When the concave portion of the fine pattern of the template 200 isfilled with the resist, the resist is photo-cured in a state where thefilling is not sufficient, and thus, the pattern defect DEF occurs.

The residual layer thickness RLT is the thickness of the resist residuallayer generated in each of the patterns of the resist pattern RP due tothe gap between the wafer 100 and the template 200. It is preferablethat the residual layer thickness RLT is less than or equal to apredetermined value, and it is preferable that the residual layerthickness RLT is homogeneous in the shot region and for each of the shotregions.

Such finishing properties, for example, are changed by changing each ofthe processing parameters described above.

FIG. 11 is a diagram illustrating an example of a relationship betweenthe processing parameter and the finishing properties. In FIG. 11, anupward arrow represented in the section of each of the processingparameters, and the section of the finishing properties, indicates“large”, “high”, “great”, “thick”, and the like. In addition, a downwardarrow represented in the section of the finishing properties, indicates“small”, “low”, “less”, “thin”, and the like. For example, theprotrusion defect EXT decreases, the pattern defect DEF increases, andthe residual layer thickness RLT decreases, as the gap between thetemplate 200 and the wafer 100 increases. In addition, for example, theprotrusion defect EXT decreases, the pattern defect DEF increases, andthe residual layer thickness RLT increases, as the pressing speedincreases. In addition, for example, the protrusion defect EXTincreases, the pattern defect DEF decreases, and the residual layerthickness RLT increases, as the resist dropping amount increases.

Thus, a plurality of processing parameters in a trade-off relationship,are suitably adjusted, and thus, it is possible to adjust the finishingproperties of the resist pattern RP to be appropriate. For example, theflow of FIG. 9 described above, is repeated while changing each of theprocessing parameters at the time of conditioning the processingparameter, and the finishing properties of the resist pattern RP areadjusted. However, the relationship between the processing parameter andthe finishing properties of the resist pattern RP, illustrated in FIG.11, is merely an example, and can be suitably changed. In addition, theprocessing parameter that can be used in the conditioning, is notlimited to the example of FIG. 11.

The effect of the imprint apparatus 1 a of the modification example ofthe first embodiment will be described.

The finishing properties of the resist pattern RP, illustrated in FIG.11, can also be changed according to the length of the elapsed time ofeach of the shot regions. For example, in the shot region where theelapsed time is long, the spreading of the droplet is large, and thus,the protrusion defect EXT easily occurs, and the pattern defect DEFtends to decrease. On the other hand, in the shot region where theelapsed time is short, the spreading of the droplet is small, and thus,the protrusion defect EXT rarely occurs, and the pattern defect DEFtends to increase.

In the imprint apparatus 1 a of the modification example of the firstembodiment, various processing parameters are changed for each of theshot regions, according to the length of the elapsed time. Accordingly,it is possible to suppress a variation in the finishing properties ofthe resist pattern RP for each of the shot regions, and to make thefinishing properties appropriate in the plurality of shot regions.

Furthermore, in the modification example of the first embodimentdescribed above, the recipe is selected according to the order ofdropping the resist, counted by the counting unit 61 a, but it is notlimited thereto. For example, the counting unit may directly count theelapsed time from when the resist is dropped to when the template isstamped. Alternatively, a spreading condition of the droplet may beobserved by the imaging device or the like of the alignment unit, andthe recipe may be selected according to the observation.

Second Embodiment

An imprint apparatus 2 of a second embodiment will be described by usingFIG. 12 to FIG. 14A and FIG. 14B. The imprint apparatus 2 of the secondembodiment is different from the imprint apparatus 1 of the firstembodiment, in that the spreading of the droplet in the shot regionwhere the elapsed time is long, is suppressed.

FIG. 12 is a diagram illustrating a configuration example of the imprintapparatus 2 according to the second embodiment. The imprint apparatus 2is different from the imprint apparatus 1 of the first embodiment, inthat an irradiation unit 71 and a light intensity changing unit 72 areprovided, and a configuration of a control unit 160 controlling eachunit, is different from that of the first embodiment. The same referencenumerals as the reference numerals of the imprint apparatus 1 of thefirst embodiment, will be applied to other configurations, and thedescription thereof will be omitted.

As illustrated in FIG. 12, the imprint apparatus 2 includes theirradiation unit 71 adjacent to the dropping unit 50, and the lightintensity changing unit 72 arranged on the lower side of the irradiationunit 71. The irradiation unit 71 irradiates the droplet dropped onto thewafer 100 from the dropping unit 50, with light. It is preferable thatthe light to be applied, is light having a wavelength longer than thewavelength of an ultraviolet ray to be applied from the light source 41.The light intensity changing unit 72 changes the intensity of the lightto be applied to the droplet, with a shutter, a diffuser plate, or thelike. The intensity of the light is changed according to an opening andclosing interval of the shutter and the number of times of opening andclosing, or a diffusion condition of the light. That is, it is possibleto increase the intensity of the light by increasing an opening intervalof the shutter or by increasing the number of opening times. Inaddition, it is possible to decrease the intensity of the light byfurther diffusing light. Thus, the light having a wavelength longer thanthe wavelength of an ultraviolet ray, is used, and the light intensityis adjusted, and thus, it is possible to semi-cure the droplet. Thesemi-curing indicates a state in which the droplet is not completelycured, and the viscosity increases.

The control unit 160 includes a counting unit 161, an irradiationadjusting unit 162, and a storage unit 163. The counting unit 161, theirradiation adjusting unit 162, and the storage unit 163 may be realizedby allowing the CPU to execute a program, or may be realized by adedicated hardware circuit. In addition, the storage unit 163 may berealized by an HDD or the like.

The counting unit 161 counts the order of dropping the droplet onto theshot regions to be collectively processed. From the order of droppingthe droplet, it is possible to predict the elapsed time of each of theshot regions.

In a case where the dropping unit 50 drops the droplet, the irradiationadjusting unit 162 irradiates the shot region with the light from theirradiation unit 71. More specifically, the irradiation adjusting unit162 irradiates the droplet in each of the shot regions, with light,while adjusting the intensity of the light with the irradiation unit 71and the light intensity changing unit 72, according to the order ofdropping the droplet, that is, the elapsed time to be predicted.

The storage unit 163 stores an irradiation condition table based on arelationship between an intensity of light irradiation with respect tothe droplet, and the length of the elapsed time. In FIG. 13, an exampleof the irradiation condition table is illustrated.

FIG. 13 is the irradiation condition table retained by the imprintapparatus 2 according to the second embodiment. In FIG. 13, an upwardarrow indicates “high”, and a downward arrow indicates “low”. That is,the intensity of the light increases in the shot region where it ispredicted that the elapsed time becomes long, and decreases in the shotregion where it is predicted that the elapsed time becomes short.However, such setting of the light intensity is merely an example, andcan be suitably changed.

Next, a dropping processing example in the imprint apparatus 2 will bedescribed by using FIG. 14A and FIG. 14B.

FIG. 14A and FIG. 14B are flow diagrams illustrating an example of aprocedure of resist dropping processing of the imprint apparatus 2according to the second embodiment. As illustrated in FIG. 14A and FIG.14B, the wafer stage 10 of the imprint apparatus 2 moves the shotregions A, B, C, D, E, and F, in this order, to the resist droppingposition of the dropping unit 50. The dropping unit 50 sequentiallydrops the droplet of the resist onto each of the shot regions A to F.The irradiation unit 71 sequentially irradiates the droplet in each ofthe shot regions A to F, with light, while changing the light intensitywith the light intensity changing unit 72.

FIG. 14A illustrates a state in which the wafer stage 10 is sequentiallymoved in the XF direction, the dropping of the droplet Ra with respectto the shot region A and the light irradiation, and the dropping of thedroplet Rb with respect to the shot region B and the light irradiationare ended, and the dropping of the resist with respect to the shotregion C is performed.

FIG. 14B illustrates a state in which the dropping of the resist withrespect to the shot region C is ended, and the droplet Rc of the shotregion C is irradiated with light. As with the first embodimentdescribed above, the template 200 is stamped on each of the shot regionsA to F onto which the droplet is dropped in the order of the shotregions A, B, C, D, E, and F, in the order of the shot regions F, E, D,C, B, and A. In this case, it is predicted that the elapsed time becomeslong in the order of the shot regions F, E, D, C, B, and A.

Therefore, the irradiation adjusting unit 162 adjusts the irradiationunit 71 and the light intensity changing unit 72 to obtain a thirdhighest light intensity subsequent to the shot regions A and B, andirradiates the droplet Rc of the shot region C, with light. Accordingly,the droplet Rc is in a state where the viscosity increases subsequent tothe droplets Ra and Rb of the shot regions A and B, and is in a statewhere the spreading is suppressed subsequent to the droplets Ra and Rb.The light irradiation with respect to the droplet Rc is ended, and then,the wafer stage 10 is further moved in the XF direction, and the shotregion D is moved to the resist dropping position.

Thus, the droplet is irradiated with light, while decreasing the lightintensity in the order of the shot regions A, B, C, D, E, and F.Accordingly, in the shot regions A to F having different elapsed times,the spreading conditions of the droplet are approximately the same.

A processing example in the imprint apparatus 2 will be furtherdescribed by using FIG. 15.

FIG. 15 is a flow diagram illustrating an example of a procedure ofimprint processing in the imprint apparatus 2 according to the secondembodiment. As illustrated in FIG. 15, the dropping unit 50 drops thedroplet of the resist onto a predetermined shot region (Step S201). Atthis time, the counting unit 161 counts which shot region in the shotregions to be collectively processed, is the shot region. At this time,the dropping unit 50, for example, drops the droplet by using the samedropping recipe, regardless of which shot region is the shot region. Theirradiation adjusting unit 162 adjusts the irradiation unit 71 and thelight intensity changing unit 72, according to the order counted by thecounting unit 161, and irradiates the droplet in the shot region withlight at a predetermined light intensity (S202).

The control unit 160 determines whether or not the dropping of theresist and the light irradiation with respect to all of the shot regionsto be collectively processed, are ended (Step S203). When the droppingof the resist and the light irradiation with respect to all of the shotregions are not ended (Step S203: No), the control unit 160 repeats theprocessings of Steps S201 and S202.

When the dropping of the resist and the light irradiation with respectto all of the shot regions are ended (Step S203: Yes), the control unit160 executes alignment with respect to a predetermined shot region, inthe shot regions (Step S204). The control unit 160 stamps the template200 on the resist in the shot region (Step S205). At this time, thecontrol unit 160, for example, performs the imprint processing by usingthe same imprint recipe, regardless of which shot region is the shotregion.

The control unit 160 determines whether or not the stamping of thetemplate 200 with respect to all of the shot regions subjected to thedropping of the droplet and the light irradiation, is ended (Step S206).When the stamping with respect to all of the shot regions is not ended(Step S206: No), the control unit 160 repeats the processings of StepsS204 and S205. When the stamping with respect to all of the shot regionsis ended (Step S206: Yes), the control unit 160 determines whether ornot the imprint processing with respect to all of the shot regions onthe wafer 100 is ended (Step S208).

When the imprint processing with respect to all of the shot regions isnot ended (Step S208: No), the processings of Step S201 to Step S207 arerepeated. When the imprint processing with respect to all of the shotregions is ended (Step S208: Yes), the control unit 160 ends the imprintprocessing.

As described above, the imprint processing in the imprint apparatus 2 isended.

The imprint apparatus 2 of the second embodiment also has the effect ofthe first embodiment.

In addition, in the imprint apparatus 2 of the second embodiment, thedroplet in the shot regions A to F having different elapsed times, isirradiated with light having different intensities. Accordingly, thespreading conditions of the droplet in the shot regions A to F areapproximately the same, and it is possible to suppress a variation inthe finishing properties of the resist pattern. Accordingly, forexample, it is possible to process each of the shot regions by using thesame dropping recipe and the same imprint recipe.

Furthermore, in the second embodiment described above, an example inwhich the imprint processing is performed by using the same droppingrecipe and the same imprint recipe, has been described, but it is notlimited thereto. For example, the processing parameter may be changedfor each of the shot regions, in addition to irradiating each of theshot regions with light by changing the light intensity according to theelapsed time. Accordingly, it is possible to further suppress avariation in the finishing properties of the resist pattern.

When the processing parameter is changed in addition to the lightirradiation with respect to each of the shot regions, for example, it ispossible to suitably adjust the plurality of processing parameters foreach of the shot regions, according to the relationship between theprocessing parameter and the finishing properties, as illustrated inFIG. 16.

FIG. 16 is a diagram illustrating an example of the relationship betweenthe processing parameter and the finishing properties. In FIG. 16, anupward arrow represented in the section of each of the processingparameters, and the section of the finishing properties, indicates“large”, “high”, “great”, “thick”, and the like. In addition, a downwardarrow represented in the section of the finishing properties, indicates“small”, “low”, “less”, “thin”, and the like. For example, theprotrusion defect decreases, the pattern defect increases, and theresidual layer thickness increases, as the intensity of the lightirradiation with respect to the droplet increases. However, therelationship between the processing parameter and the finishingproperties of the resist pattern, illustrated in FIG. 16, is merely anexample, and can be suitably changed. In addition, the processingparameter that can be used in the conditioning, is not limited to theexample of FIG. 16.

First Modification Example

Next, an imprint apparatus 2 a of a first modification example of thesecond embodiment, will be described by using FIG. 17. In the imprintapparatus 2 a of the first modification example of the secondembodiment, configurations of an irradiation unit 71 a and a lightintensity changing unit 72 a, and a control unit 160 a controlling eachunit, are different from those of the imprint apparatus 2 of the secondembodiment. The same reference numerals as the reference numerals of theimprint apparatus 2 of the second embodiment, will be applied to otherconfigurations, and the description thereof will be omitted.

FIG. 17 is a diagram illustrating a configuration example of the imprintapparatus 2 a according to the first modification example of the secondembodiment. As illustrated in FIG. 17, the imprint apparatus 2 aincludes the irradiation unit 71 a adjacent to the light source 41, andthe light intensity changing unit 72 a arranged on the lower side of theirradiation unit 71 a. The irradiation unit 71 a irradiates the dropletdropped onto the wafer 100 from the dropping unit 50, with light. It ispreferable that the light to be applied, is light having a wavelengthlonger than the wavelength of an ultraviolet ray to be applied from thelight source 41. The light intensity changing unit 72 a changes theintensity of the light to be applied to the droplet, with a shutter, adiffuser plate, or the like.

In addition to this or instead thereof, the light intensity changingunit 72 a changes an intensity distribution of the light in the shotregion, by a photomask or the like. The photomask, for example, includesa light shielding film shielding light with respect to the centralportion of the shot region, and mainly irradiates an outercircumferential portion of the shot region, with the light from theirradiation unit 71 a. Accordingly, in the droplet of the resist in theshot region, the outer circumferential portion is semi-cured into theshape of a frame. On the apparatus configuration, there is a relativelya margin in a space in the vicinity of the light source 41, and thus,for example, it is possible to arrange the light intensity changing unit72 a having the configuration of the photomask or the like.

The control unit 160 a includes the counting unit 161, an irradiationadjusting unit 162 a, and the storage unit 163. The counting unit 161,the irradiation adjusting unit 162 a, and the storage unit 163 may berealized by allowing the CPU to execute a program, or may be realized bya dedicated hardware circuit. In addition, the storage unit 163 may berealized by an HDD or the like.

The irradiation adjusting unit 162 a irradiates the droplet in each ofthe shot regions, with light, while adjusting the intensity of the lightwith the irradiation unit 71 a and the light intensity changing unit 72a, according to the order of dropping the droplet, that is, the elapsedtime to be predicted.

In the imprint apparatus 2 a of the first modification example of thesecond embodiment, the droplet is semi-cured into the shape of a frame,by the light intensity changing unit 72 a including the photomask or thelike. Accordingly, it is possible to further suppress the spreading ofthe droplet.

In addition, in the imprint apparatus 2 a of the first modificationexample of the second embodiment, the droplet is semi-cured into theshape of a frame, and thus, the spreading of the droplet in the centralportion of the shot region due to its own weight, is not inhibited.Accordingly, for example, the filling of the concave portion of thetemplate 200 with the resist is accelerated while suppressing theprotrusion defect in the outer circumferential portion, and thus, it iseasy to suppress the pattern defect.

Second Modification Example

An imprint apparatus of a second modification example of the secondembodiment is different from that of the second embodiment describedabove, in that the light source has a function of an irradiation unitthat irradiates the droplet with light. Accordingly, it is possible tofurther simplify the device configuration.

Furthermore, the light intensity changing unit including the shutter,the diffuser plate, the photomask, or the like, described above, may bearranged on the lower side of the light source.

Other Embodiments

In the first embodiment, the second embodiment, and the like, describedabove, the template stage 21 is moved to the lower side, and thetemplate 200 is pressed against the wafer 100, but it is not limitedthereto. The wafer stage may be moved to the upper side, and the wafermay be pressed against the template, and thus, the fine pattern of thetemplate may be stamped on the resist on the wafer. Thus, the templateand the wafer are pressed against each other by the template stage movedto the lower side, or the template stage maintaining a predeterminedposition, and thus, the fine pattern of the template is stamped on thewafer.

The control units 60, 60 a, 160, and 160 a of the imprint apparatus 1, 1a, 2, and 2 a of the first embodiment, the second embodiment, and thelike, described above, may be incorporated in the imprint apparatus 1, 1a, 2, and 2 a, or may remotely control each unit by being disposed in aposition separated from the imprint apparatus 1, 1 a, 2, and 2 a. Inboth cases, the imprint apparatus 1, 1 a, 2, and 2 a of the firstembodiment, the second embodiment, and the like, include a receivingunit receiving a control signal from the control units 60, 60 a, 160,and 160 a, and thus, each unit may be controlled according to thecontrol signal from the control units 60, 60 a, 160, and 160 a, thecontrol signal being received by the receiving unit. In addition, inboth cases, the imprint apparatus 1, 1 a, 2, and 2 a of the firstembodiment, the second embodiment, and the like, can also be regarded asan imprint system including the control units 60, 60 a, 160, and 160 a.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. An imprint apparatus that presses a pattern of an original plate against a photo-curable resin dropped onto a substrate, and transfers the fine pattern to the photo-curable resin by applying light, the apparatus comprising: a dropping unit that drops the photo-curable resin onto a shot region obtained by dividing the substrate into a plurality of sections; an original plate supporting unit that contacts the pattern of the original plate to the photo-curable resin on the substrate; and a substrate supporting unit that supports the substrate and moves the substrate, a predetermined shot region of the substrate being moved to a dropping position of the dropping unit or a contacting position of the original plate, wherein the dropping unit is controlled to drop the photo-curable resin onto the plurality of shot regions of the substrate sequentially before contacting the original template to the photo-curable resin, and the original plate supporting unit is controlled to contacts the original plate to the photo-curable resin dropped onto the plurality of shot regions sequentially to transfer the pattern to the resin, while operating the substrate supporting unit.
 2. The imprint apparatus according to claim 1, wherein the dropping unit is controlled such that the photo-curable resin is dropped in the order of a first shot region and a second shot region, and the original plate supporting unit is controlled such that the pattern is transferred by contacting the original plate on the photo-curable resin, in the order of the second shot region and the first shot region.
 3. The imprint apparatus according to claim 1, further comprising: an irradiation unit that irradiates light onto a liquid droplet of the photo-curable resin dropped onto the substrate before the original plate is contacted
 4. The imprint apparatus according to claim 3, further comprising: a light intensity changing unit that changes an intensity of light to be applied to the liquid droplet of the photo-curable resin from the irradiation unit.
 5. The imprint apparatus according to claim 4, wherein the light intensity changing unit is a shutter or a diffuser plate.
 6. The imprint apparatus according to claim 3, wherein the irradiation unit is disposed to be adjacent to the dropping unit.
 7. The imprint apparatus according to claim 3, further comprising: a light source that irradiates light to the photo-curable resin, in a state in which the original plate is contacted to the photo-curable resin, wherein the irradiation unit is disposed to be adjacent to the light source.
 8. The imprint apparatus according to claim 1, further comprising: an irradiation unit that irradiates light to a liquid droplet of the photo-curable resin dropped onto the substrate, before the original plate is contacted, wherein an intensity of light applied to the liquid droplet is changed among the plurality of shot regions, the intensity being changed according to a length of a time from when the photo-curable resin is dropped to when the original plate is contacted to the photo-curable resin.
 9. The imprint apparatus according to claim 8, wherein the intensity of the light applied to the liquid droplet increases as the time from when the photo-curable resin is dropped to when the original plate is stamped on the photo-curable resin, increases, in the plurality of shot regions.
 10. The imprint apparatus according to claim 1, wherein at least any one of a contacting speed of the original plate, a pressing force of the original plate with respect to the photo-curable resin, and a releasing speed of the original plate from the photo-curable resin is changed in the plurality of shot regions, according to a length of a time from when the photo-curable resin is dropped to when the original plate is contacted on the photo-curable resin.
 11. An imprint method of pressing a fine pattern of an original plate against a photo-curable resin dropped onto a substrate, and of transferring the pattern to the photo-curable resin by applying light, the method comprising: sequentially dropping the photo-curable resin onto a plurality of shot regions obtained by dividing the substrate into a plurality of sections, and then, transferring the pattern by sequentially contacting the original plate to the photo-curable resin dropped onto the plurality of shot regions.
 12. The imprint method according to claim 11, further comprising: dropping the photo-curable resin in the order of a first shot region and a second shot region at the time of dropping the photo-curable resin; and contacting the original plate on the photo-curable resin, in the order of the second shot region and the first shot region, at the time of contacting the original plate on the photo-curable resin.
 13. The imprint method according to claim 11, further comprising: irradiating light to a liquid droplet of the photo-curable resin dropped onto the substrate before the original plate is contacted.
 14. The imprint method according to claim 13, further comprising: changing an intensity of light applied to the liquid droplet in the plurality of shot regions, according to a length of a time from when the photo-curable resin is dropped to when the original plate is contacted on the photo-curable resin.
 15. The imprint method according to claim 11, further comprising: changing at least any one of a contacting speed to the original plate, a pressing force of the original plate with respect to the photo-curable resin, and a releasing speed of the original plate from the photo-curable resin in the plurality of shot regions, according to a length of a time from when the photo-curable resin is dropped to when the original plate is contacted to the photo-curable resin.
 16. A manufacturing method of a semiconductor device that presses a pattern of an original plate against a photo-curable resin dropped onto a semiconductor substrate, and transfers the pattern to the photo-curable resin by applying light, the method comprising: preparing the semiconductor substrate on which a film to be processed is formed; sequentially dropping the photo-curable resin onto a plurality of shot regions obtained by dividing the semiconductor substrate into a plurality of sections, and then, transferring the pattern by sequentially contacting the original plate to the photo-curable resin dropped onto the plurality of shot regions; and processing the film to be processed by using the photo-curable resin to which the pattern is transferred, as a mask.
 17. The manufacturing method of a semiconductor device according to claim 16, further comprising: dropping the photo-curable resin in the order of a first shot region and a second shot region, at the time of dropping the photo-curable resin; and contacting the original plate to the photo-curable resin, in the order of the second shot region and the first shot region, at the time of contacting the original plate to the photo-curable resin.
 18. The manufacturing method of a semiconductor device according to claim 16, further comprising: irradiating light to a liquid droplet of the photo-curable resin dropped onto the semiconductor substrate before the original plate is contacted.
 19. The manufacturing method of a semiconductor device according to claim 18, further comprising: changing an intensity of light applied to the liquid droplet in the plurality of shot regions, according to a length of a time from when the photo-curable resin is dropped to when the original plate is contacted to the photo-curable resin.
 20. The manufacturing method of a semiconductor device according to claim 16, further comprising: changing at least any one of a contacting speed of the original plate, a pressing force of the original plate with respect to the photo-curable resin, and a releasing speed of the original plate from the photo-curable resin in the plurality of shot regions, according to a length of a time from when the photo-curable resin is dropped to when the original plate is contacted to the photo-curable resin. 